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Perpendicular magnetic tunnel junctions (p-MTJs) have attract immense attention due to high thermal stability and low critical current for spin-transfer torque induced magnetization switching, as compared to in-plane MTJs. The conventional perpendicular magnetic anisotropy (PMA) materials explored so far include rare-earth/transition metal alloys, Co/(Pd, Pt, Ni) multilayers, and L10-or-dered (Co,...
This paper proposes a new thin-film superconducting fault current limiter (SFCL) that is composed of double-sided thin films to improve the compactness of SFCL systems. In the double-sided design with assembling SFCL units on a wafer comes a possibility of freeing from the negative effect of magnetic flux penetration at the film edges by orienting current paths and taking advantage of thermal interplay...
The RS behaviors of stoichiometric and nonstoichiometric CeOx films were studied. Current compliance-free resistive switching was achieved in the nonstoichiometric CeOx film, which are helpful to remove the limitation of current compliance to simplify RRAM circuits design.
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