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As new power transistors, such as SiC Mosfets, are being increasingly used in power electro- nics systems, it has become necessary to use special drivers. This article compares the parame- ters of SiC Mosfet, Si Mosfet, and IGBT gate circuits. Differences are discussed with reference to the ways in which these transistors are controlled. Gate circuit parameters of SiC transistors differ slightly from...
Currently, manufacturers of power-electronic components are trying to introduce the silicon carbide (SiC) technology in their products and MOSFET transistors made with this technology are available on the market. They are characterised by a significantly higher operating frequency, reaching even 100 kHz and low switching losses. The application of this type of devices causes high voltage gradients...
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