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We report on numerical simulations of quantum-dot heterostructures derived from experimental high-resolution transmission electron microscopy results. A real sample containing large InGaN islands with size of ten of nm and non-uniform In content is analyzed. The three-dimensional models for the quantum dots have been directly extrapolated from experimental results by a numerical algorithm. We show...
Different methods of stimulation of phase separation in an InGaN QWs by technological methods and by design of structure were investigated. Effect of admixing of hydrogen during growth interruptions (GIs) after deposition of the InGaN QWs on their structural and optical properties and properties of InGaN‐based LEDs was investigated. Effect of growth pressure on the phase separation was investigated...
New approach for high performance lasing in semiconductors using an effect of exciton-induced waveguiding is proposed and realized. We demonstrate RT lasing in a structure without external waveguide formed by cladding of an active region with wider bandgap layers. Stacked arrays of nanoscale CdSe islands inserted directly in a wide bandgap matrix are used as an active media in our case. The lasing...
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