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In this paper, we have investigated the effect of drain doping profile on a double-gate tunnel field-effect transistor (DG-TFET) and its radio-frequency (RF) performances. Lateral asymmetric drain doping profile suppresses the ambipolar behavior, improves OFF-state current, reduces the gate–drain capacitance, and improves the RF performance. Further, placing the high-density layer in the channel near...
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