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In this paper we present electrostatic model of 3D Triple Metal Quadruple Gate (TMQG) MOSFET of rectangular cross-section based on quasi-3D method. The analytical equations for channel potential and characteristic length have been derived by decomposing TMQG into two 2D perpendicular cross-sections (triple metal double gate, TMDG) and the effective characteristic length of TMQG is found using equivalent...
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