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Trzy próbki węglika krzemu o politypie 4H (4H-SiC) pokryto sekwencją warstw węgiel/nikiel/krzem/nikiel/krzem, a następnie poddano wygrzewaniu w celu wytworzenia kontaktów omowych. Analiza pasm ramanowskich wskazuje na różnice pomiędzy widzianą z obu stron strukturą warstwy węglowej pomimo, że grubość samej warstwy węglowej odpowiada 8 do 10 monowarstwom grafenowym.
The increasing demand for electronic transistor with the cut-off frequency 100 GHz devices capable of function at high power and have been demonstrated this year. frequency levels, high temperatures, and harsh In order to take the full advantage of their environment is one of the most significant issue superior inherent properties several challenges of modern information society, especially in the...
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