The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this abstract, Northrop Grumman presents a novel monolithically integrated 1 kV normally-off VJFET power switch that combines a normally-off VJFET section with a normally-on VJFET section in a single vertical structure. The upper gates control the normally-off section while the lower-gates control the normally-on section. Depending on the specifics of the switching application, the device can be...
The effects of implanted Ge on the resistance of nickel-metal contacts to n-type and p-type 4H-SiC are reported. The Ge was implanted with an energy of 346 keV and a dose of 1.7×1016 cm−2, and the wafer was annealed up to 1700°C for 30 min. Contact resistance measurements using the transfer length method (TLM) were performed on etched mesas of n-type and p-type 4H-SiC, with and without the Ge. For...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.