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A novel suspended GeSn microstructure is demonstrated by selective etching of GeSn thin film on Ge. XRD and μ-Raman measurements show that the compressive strain in the GeSn thin film is effectively relaxed, and furthermore, unexpected tensile strain was introduced in the suspended GeSn.
TSV-Free Interposer (TFI) technology eliminates TSV fabrication and reduces manufacturing and material cost. Co-design modelling methodology is established for TFI technology with considering wafer process, package assembly and package/board level reliability and thermal performance to optimize structure design, wafer process, assembly process and material selection. Experimental results are used...
We propose a self-consistent calculation method for apertureless THz near-field microscope (NFM) which is based on an exact image theory. Within the quasi-electrostatic limit, the exact image theory was iteratively applied to calculate interactions between dielectric spheres and substrate effects. The calculated near field was in excellent agreement with results from a commercial finite element method...
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