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In this paper, we present reliability and stability data based on a large body of data accumulated from high volume production of SiC power MOSFETs. The SiC MOSFETs (Gen2, C2M) showed excellent body diode and threshold voltage stability after 1000 hours of accelerated stressing tests. Results from next generation SiC power MOSFET development efforts are also presented. A significant reduction in specific...
Modern power electronics systems try to maximize power density and efficiency. As such, the active switch is required to safely handle very stressful transient conditions. A 56 mm2, 180 A, SiC DMOSFET manufactured by Cree Inc. is evaluated by electrically stressing the device in a RLC ring-down test system capable of producing peak current in excess of 600 A (>3X rated current) and di/dt's as high...
Since Cree, Inc.'s 2nd generation 4H-SiC MOSFETs were commercially released with a specific on-resistance (RON, SP) of 5 mΩ·cm2 for a 1200 V-rating in early 2013, we have further optimized the device design and fabrication processes as well as greatly expanded the voltage ratings from 900 V up to 15 kV for a much wider range of high-power, high-frequency, and high-voltage energy-conversion and transmission...
In this paper, we report our recently developed large area 4H-SiC n-IGBTs that have a chip size of 1 cm2 and an active conducting area of 0.37 cm2. A blocking voltage of 22.6 kV has been demonstrated with a leakage current of 9 μA at a gate bias of 0 V at room-temperature. This is the highest breakdown voltage of a single MOS-controlled semiconductor switch reported to date. To improve the conductivity...
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