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A new design of a very high-voltage, single-bias, and optically-controlled Emitter-Turn-Off (ETO) thyristor is introduced. Both the thyristor and the controlling switch are triggered optically using two optical sources. The silicon-carbide (4H-SiC) thyristor is triggered using a short wavelength laser source and the optical silicon switch in series with the anode contact of the thyristor is triggered...
Modern power electronics systems try to maximize power density and efficiency. As such, the active switch is required to safely handle very stressful transient conditions. A 56 mm2, 180 A, SiC DMOSFET manufactured by Cree Inc. is evaluated by electrically stressing the device in a RLC ring-down test system capable of producing peak current in excess of 600 A (>3X rated current) and di/dt's as high...
The N2-doped 3C-SiC thin films have been grown by low-pressure, chemical vapor deposition (LPCVD) on amorphous Si3N4/p-Si (111) substrates using the single, organosilane-precursor trimethylsilane [(CH3)3SiH]. The effects of N2 flow rate and growth temperature on the electrical properties of SiC films were investigated by Hall-effect measurements. The electron-carrier concentration is between 1017–10...
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