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This work reveals the impact of quantum mechanical effects on the device performancce of n-type silicon nanowire transistors (NWT). Here we present results for two Si NWTs with circular and elliptical cross-section. Additionally we designed both devices to have identical cross-section in order to provide fair comparison. Also we extended our discussions by reporting devices with five different gate...
The gate-all-around (GAA) silicon nanowire transistor (SNWT) is considered as one of the best candidates for ultimately scaled CMOS devices. This paper discusses the process impact on nanowire LER/LWR, as well as the impact of 2D nanowire LER on performance variation and degradation. And it is found that SNWTs, which is immune to channel RDF(random dopant fluctuation), exhibit SDE-RDF which is enhanced...
A leading edge 45 nm CMOS system-on-chip (SOC) technology using Hafnium-based high-k/metal gate transistors has been optimized for low power products. PMOS/NMOS logic transistor drive currents of 0.86/1.08 mA/um, respectively, have been achieved at 1.1 V and off-state leakage of 1 nA/um. Record RF performance for a mainstream 45 nm bulk CMOS technology has been achieved with measured fT/fMAX values...
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