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Strain techniques have been adopted and widely used in the advanced nodes since early 65nm for carrier mobility improvement. For PMOS, eSiGe incorporation in the SD is the process of choice to induce compressive strain in the channel for mobility improvement. To further lower the contact resistance, it is preferred to boost Boron concentration for pSD formed by eSiGe process. Normal implant process...
Conventional silicon devices and integrated circuits are fabricated in the diamond cubic phase of silicon, so-called Si-I. Other phases of silicon can be formed under pressure applied by indentation and these phases are metastable at room-temperature and pressure. As we demonstrate, such phases behave entirely differently to normal diamond-cubic silicon (Si-I) having different electrical properties...
In this paper, a study is made of the effect of fluorine implantation on boron transient enhanced diffusion in Si and SiGe by characterising the diffusion of boron marker layers in Si and SiGe in samples with and without a 288keV, 6×10 13 cm −2 P + implant and with and without a 185keV, 2.3×10 15 cm −2 F + implant. It is shown that fluorine implantation...
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