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Unusual properties of the diluted nitrides A III B V –N make them very attractive in the point of view of fundamental investigations and practical applications. This work presents the growth characteristics and properties of the undoped GaAs 1−x N x /GaAs heterostructures obtained by the atmospheric pressure metal organic vapour phase epitaxy (APMOVPE). The properties...
Layers of monocrystalline GaN were grown at different temperatures by atmospheric pressure metalorganic chemical vapour deposition (MOCVD) method on the sapphire substrates. The high quality of the layers was confirmed by X-ray diffraction and photoluminescence spectra measurements. For comparison purposes, simultaneous growth on a-plane and c-plane sapphire substrates was performed for each of...
Results of the crystallographic investigations of the epitaxial Ga 1-x Al x As/GaAs layers with different compositions are presented. The epitaxial layers were produced using the MOCVD technology. Based on the obtained results, the structural analysis of the layers and appreciation of the perfection degree of the structure of investigated layers have been performed. A misfit...
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