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Reliability performance of 0.1-μm Pt-sunken gate InP HEMT MMICs on 4-inch InP substrates was evaluated under elevated temperature life testing. The primary degradation mechanism was observed to be the progressive Schottky junction reaction with the Schottky barrier InAlAs and the InGaAs channel. Despite the progressive Schottky junction reaction with the InAlAs and InGaAs materials, the lifetest at...
For the first time, the sub-mW operation of InP HEMT X-band low-noise amplifiers on 4-inch InP wafer was demonstrated. With optimized non-alloyed ohmic contact, gate recess profile and epitaxial layer design, the InP HEMT achieves average peak transconductance of 1150 mS/mm at VDS = 0.3 V. The mean current cut off frequency is above 150 GHz at VDS = 0.3 V and IDS = 150 mA/mm. The developed low power...
A wafer-level-packaging technology was used to integrate the 0.1 mum AlSb/InAs HEMT low-noise amplifiers with power amplifiers, switches and phase shifters to form a compact tri-stack transmit/receive module for light-weight and ultralow-power applications. The high manufacturability of AlSb/InAs HEMT receivers operating at 0.9 mW was demonstrated on a tri-stack wafer. This demonstration of manufacturable...
Four types of gate metallization were investigated to evaluate the manufacturability of 0.1 mum AlSb/InAs HEMTs. It has been found that device performance strongly depends on the gate metallization. This information is essential for the manufacturability of 0.1 mum AlSb/InAs HEMTs for ultralow-power applications.
This paper describes a manufacturable and reliable 0.1 μm AlSb/InAs MMIC technology for ultra-low power applications. AlSb/InAs HEMTs have been demonstrated with only one-tenth power dissipation of conventional InAlAs/InGaAs/InP HEMTs. The uniform DC and RF performance of AlSb/InAs HEMTs have been demonstrated on 3-inch GaAs substrates. The further demonstration of reliable AlSb/InAs HEMT technology...
To improve the passivation process of AlGaN/GaN HEMTs, a unique passivation process has been developed in which an SiN passivation layer is deposited by MBE immediately following epitaxial growth of the HEMT structure. The effectiveness of this in situ passivation process is evaluated by comparing devices fabricated with this process to the conventional PECVD passivation process in which the SiN is...
RF stability measurements have been performed on over 300 MBE and MOCVD grown devices with and without a thin (~10 Aring) AlN interlayer located between the AlGaN barrier and GaN channel. 70 % of devices with the AlN interlayer showed an increase in gate leakage during RF stress, while only 28 % of the devices without the AlN interlayer showed an increase in gate leakage during RF stress. An increase...
We compare the experimental and theoretical photoluminescence (PL) spectra of power and low-noise pseudomorphic AlGaAs InGaAs high electron mobility transistor (HEMT) profiles. The modeling approach uses a self-consistent solution between Schrödinger equation and Poisson's equation to calculate the electron and hole energy levels, envelope functions, and concentrations. Results are in good agreement...
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