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This letter presents an ultra-wideband low noise amplifier (LNA) using gallium-nitride (GaN) high-electron mobility transistors (HEMT) technology. A -3 dB bandwidth of 1-25 GHz with 13 dB peak power gain is achieved using a modified resistive-feedback topology. To obtain such a wide bandwidth, several bandwidth enhancement techniques are utilized. An inductor connected to the source of the input transistor...
Wafer-scale-assembly (WSA) technology has been developed for compact and light-weight applications at the Northrop Grumman Corporation. To insure successful insertion of WSA hermetic MMICs for military and space applications, high-reliability demonstration is essential. In this study, we performed two-temperature lifetesting to evaluate the reliability performance of WSA hermetic GaAs HEMT MMICs....
This paper reports on a S-,C-band LNA-PA which achieves a sub-0.2 dB noise figure over a multi-octave band and a Psat of 2 Watts at a cooled temperature of -30degC. The GaN MMIC is based on a 0.2 mum AlGaN/GaN-SiC HEMT technology with an fT ~ 75 GHz. At a cool temperature of -30degC and a power bias of 15 V-400 mA, the MMIC obtains 0.25-0.45 dB NF over a 2- 8 GHz band and a linear PldB of 32.8 dBm...
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