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For the first time, the sub-mW operation of InP HEMT X-band low-noise amplifiers on 4-inch InP wafer was demonstrated. With optimized non-alloyed ohmic contact, gate recess profile and epitaxial layer design, the InP HEMT achieves average peak transconductance of 1150 mS/mm at VDS = 0.3 V. The mean current cut off frequency is above 150 GHz at VDS = 0.3 V and IDS = 150 mA/mm. The developed low power...
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