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RF stability measurements have been performed on over 300 MBE and MOCVD grown devices with and without a thin (~10 Aring) AlN interlayer located between the AlGaN barrier and GaN channel. 70 % of devices with the AlN interlayer showed an increase in gate leakage during RF stress, while only 28 % of the devices without the AlN interlayer showed an increase in gate leakage during RF stress. An increase...
A Q-band 40-GHz GaN monolithic microwave integrated circuit voltage controlled oscillator (VCO) based on AlGaN/GaN high electron mobility transistor technology has been demonstrated. The GaN VCO delivered an output power of +25dBm with phase noise of -92dBc/Hz at 100-KHz offset, and -120dBc/Hz at 1-MHz offset. To the best of our knowledge, this represents the state-of-the-art for GaN VCOs in terms...
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