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III-V FETs are being developed for potential application in 0.3-3 THz systems and VLSI. To increase bandwidth, we must increase the drive current Id = qnsvinjWg per unit gate width Wg, requiring both high sheet carrier concentrations ns and high injection velocities vinj. Present III-V NFETs restrict control region transport to the single isotropic Γ band minimum. As the gate dielectric is thinned,...
III-V FETs are in development for both THz and VLSI applications. In VLSI, high drive currents are sought at low gate drive voltages, while in THz circuits, high cutoff frequencies are required. In both cases, source and drain access resistivities must be decreased, and transconductance and drain current per unit gate width must be increased by reducing the gate dielectric thickness, reducing the...
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