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CW light output power as high as 38 mW at room temperature and with a CW operable temperature as high as 80?C, both under single-longitudinal-mode operation, has been achieved for the first time in newly developed 1.3 ?m distributed-feedback (DFB) laser diodes with a double-channel planar buried heterostructure (DC-PBH).
InP/GaInAsP buried heterostructure (BH) lasers for the 1.5 ?m region have been fabricated on semi-insulating InP substrates. The threshold current of the lasers is as low as 38 mA under CW operation at 25?C, which is nearly the same as for BH lasers fabricated on n-type InP substrates.
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