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Robust on-chip ESD protection without RF performance degradation is a challenge in RF IC designs. This paper reviews a new co-design technique for ultra wideband (UWB) RF ICs and ESD protection so as to achieve whole-chip design optimization.
This paper investigates the Atomic layer deposited (ALD) coatings on an integrated Microelectromechanical (MEMS) flow sensor to resist ironic contamination of on-chip CMOS circuits. 25nm Al2O3/TiO2 multilatyer thin film was deposited on the integrated flow sensor. To assess the ability of ALD coatings to resist K+ and Na+ contamination, the flow sensor was immersed into NaCl and KCl solutions for...
A wireless switch designated for battery-supplied implantable medical devices is designed and verified based on a passive RF receiver. The switch employs wireless energy recovery and wireless identification, and consumes zero standby power. Unlike the commonly used dry reed switch, the proposed switch features high tolerance to noise and disturbance, as well as compatibility with integrated circuits...
A CMOS voltage-mode multi-valued literal gate is presented. The ballistic electron transport characteristic of nanoscale MOSFETs is smartly used to compactly achieve universal radix-4 literal operations. The proposed literal gates have small numbers of transistors and low power dissipations, which makes them promising for future nanoscale multi-valued circuits. The gates are simulated by HSPICE.
A new architecture for a CMOS electrothermal frequency-locked-loop (FLL) is presented. Unlike previous work, it does not require the use of off-chip capacitors. The FLL's output frequency is determined by the well-defined thermal diffusivity of bulk silicon. Measurements show that the spread in the FLL's output frequency corresponds to an untrimmed inaccuracy of less than plusmn0.7degC (3sigma) over...
A CMOS electrothermal frequency-locked-loop (FLL) is presented, whose output frequency is determined by the temperature-dependent thermal diffusivity of the silicon substrate. Measurements show that this temperature dependence is essentially process independent. After a batch calibration, the electrothermal FLL has an untrimmed inaccuracy of less than plusmn0.7degC (3sigma) over the temperature range...
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