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Submicron single crystal-Si TFTs and a test circuit are integrated on a 320 mm ?? 400 mm ( Gen 1 ) glass substrate for the first time, by transferring devices using hydrogen exfoliation and direct bonding without adhesive. Characteristics of the NMOS-TFT is comparable with that of SOI, while PMOS-TFT shows some degradation of sub-threshold swing. Transferred CMOS show high performance and shift register...
In wireless multi-hop networks, when an end host would like to communicate with external wired hosts, data packets are to be transmitted at first to a gateway node which is connected to both a wireless multi-hop network and a wired network. When there are multiple candidate gateways to be connected, a wireless host should select one gateway as its own default gateway. One possible and simple way is...
For improvement of device yield within a wafer, SEN's MIND system is powerful tool. It is found that one can compensate variations from other manufacturing processes of semiconductor devices and can fabricate the "same" semiconductor devices using the MIND system. "Different dose" ion implantation processes are intentionally given on one wafer by using SEN's MIND system. In this...
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