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Due to high mobility (1000-1500 cm/V2), high sheet charge density (~1013 cm-2), and high electron saturation velocity (~2.0times105 cm/s), AlGaN/GaN HFET's were shown to have great potential for linear operation in high dynamic range module. However, significant linearity degradation was found in practical devices compared to that predicted from theoretic derivation. In this work it is demonstrated...
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