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Novel amorphous silicon solar cells with sigma -doped p layers have been fabricated. The boron concentration in the sigma -doped p layer has been measured by secondary ion mass spectrometry. A peak boron concentration of 2*10/sup 21//cm/sup 3/, which is one or two orders of magnitude larger than that of a conventional a-Si p layer, has been obtained. A conversion efficiency of 11.5% has been obtained...
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