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Focused gallium (Ga) ion beam technology has been proposed to modify the surface of GaN thin films. Due to the significant advancement in nitride semiconductors, the solid-state light emitting diodes will gradually replace fluorescent lamps in the next decade. However, further improvements in light extraction and power efficiency are still highly desired. GaN is limited by its high refractive index,...
The optically-compensated-bend mode pi-cell displays exhibit fast-response time and wide-viewing angle characteristics. However, it requires a transition of the liquid crystal molecule from an initial splay state to the bend state configuration before providing the quick operation. A high voltage and a long warm-up time are needed to transform to the bend state. In this paper, the polyimide alignment...
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