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Thermal and plasma enhanced atomic layer deposition (ALD) of tantalum nitride (TaN) thin films have been performed using PDMAT and NH3, and TBTDET in combination with hydrogen radicals and argon ions, respectively. The films were grown on SiO2, SiCOH and Cu, to study the influence of diverse kinds of substrates on growth behaviour and properties of ultra thin TaN layers. X-ray reflectometry (XRR),...
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