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Hafnium oxide (HfO2) ceramic thin films were deposited on p-type silicon substrate by radio frequency magnetron sputtering at various RF powers and substrate temperatures. The morphological and electrical properties of the sputtered films were investigated and a correlation between the surface and interface properties of the HfO2 films was established with the variation of sputtering parameters. The...
An attempt to correlate deposition-induced effects and the morphological properties with the electrical properties of the aluminum nitride (AlN) films have been made. The AlN film was sputter deposited on silicon while increasing the pressure in steps from 2×10 −3 to 8×10 −3 mbar. An X-ray diffractogram revealed that the intensity of (002) orientation increased till 6×10 −3 ...
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