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Strained Si is implemented into the standard CMOS process to enhance carrier transport properties since the 90 nm technology node. However, due to the non-uniform stress distribution in the channel, the enhancement of carrier mobility and threshold voltage strongly depend on layout parameters, such as channel length (L) and source/drain diffusion length (Lsd). In this work, a compact model that physically...
Accurate measurement of contact resistance is crucial for advanced nanometer CMOS processes. An equally important requirement is to measure contact resistances in the same micro-environment as the device-under-test (DUT) will be used in real designs. With complicated interactions among various layout shapes in nanometer CMOS processes, test structures with adequate scalability is needed. In this paper...
Strain technology has been successfully integrated into CMOS fabrication to improve carrier transport properties since 90 nm node. Due to the non-uniform stress distribution in the channel, the enhancement in carrier mobility, velocity, and threshold voltage shift strongly depend on circuit layout, leading to systematic performance variations among transistors. A compact stress model that physically...
Rapid-Thermal Annealing (RTA) with radiation heating is recently adopted in nanoscale CMOS fabrication in order to achieve ultra-shallow junction with maximum dopant activation rate. However, recent results report the systematic shift of threshold voltage (Vth) and increased Vth variation due to RTA process. The exact amount of variations depends on layout pattern density, RTA heating temperature...
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