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A novel on-chip test circuit to measure single event transient (SET) pulse widths has been developed and implemented in IBM 130-nm and 90-nm processes for characterizing logic soft errors. Test measurements with energetic ions show transient widths ranging from 100 ps to over 1 ns, comparable to legitimate logic signals in such technologies. Design options to limit the SET pulse width and hence to...
Mixed mode TCAD simulations are used to show the effects of guard bands and high density well contacts in maintaining the well potential after a single event strike and thus reduce the width of long transients in a 130-nm CMOS process. Experimental verification of the effectiveness in mitigating long transients was achieved by measuring the distribution of SET pulse widths produced by heavy ions for...
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