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Accurately analyzing the single-event (SE) vulnerability of static random-access memory (SRAM) cells leads to precisely calculated soft-error rates (SERs). Random dopant-fluctuation-induced Vt variations affect the SE vulnerability of these memory cells and increase the intercell spread in critical charge (Qcrit), which cause SE upsets. This might consequently lead to higher SERs than would be calculated,...
In the soft error domain, the critical charge Q critis used as a measure to determine if a memory cell can be upset, and on that single value most hardening techniques are based. Inaccurate estimates of the critical charge can lead to failure of hardening schemes causing space-based and terrestrial electronics to malfunction leading to prohibitive losses in cost and yield. With the design for manufacturability...
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