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In the soft error domain, the critical charge Q critis used as a measure to determine if a memory cell can be upset, and on that single value most hardening techniques are based. Inaccurate estimates of the critical charge can lead to failure of hardening schemes causing space-based and terrestrial electronics to malfunction leading to prohibitive losses in cost and yield. With the design for manufacturability...
Random dopant fluctuation (RDF) induced threshold voltage variations affect two critical parameters used as a measure of single event (SE) hardness (i) single event transient (SET) pulse widths and (ii) critical charge . This causes an increase in the spread of SET pulse widths in sequential logic circuits and in the required for single event upsets (SEUs) in static random access memory cells (SRAMs)...
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