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Fast saturable absorber recovery times have been obtained in AlGaInAs/InP multiple quantum wells using the cross absorption modulation method for wavelength conversion. We report sub-picosecond pulse generation using a 40 GHz passively mode locked laser.
We study the Mode-Locking dynamics of 40-GHz semiconductor Fabry-Pérot lasers with intracavity saturable absorber by using a Traveling-Wave-Model and a time-domain response of the semiconductor material. We analyze the influence of key parameters and compare our predictions with experimental results.
We fabricated 40 GHz passively mode-locked AlGaInAs/InP 1.55 μm lasers integrated with surface-etched distributed Bragg mirrors. Numerically optimized gratings provide low loss and accurate wavelength control. The lasers produce 10-ps Gaussian-pulses with TBP of 0.75.
We develop a comprehensive theoretical description of passive mode-locked semiconductor lasers based on a coarse grained time-domain approach. Under the approximation of intraband quasi equilibrium, our model accounts for the dispersion of gain, absorption and refractive index, nonlinear gain saturation from ultrafast processes, self-phase modulation, and spontaneous emission noise. We compare the...
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