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The mode-locked operation of a 160 GHz passively mode-locked AlGaInAs laser using a compound cavity formed by single deeply etched intracavity reflectors has been investigated. Stable harmonic mode-locking is observed in devices with ICRs which have relatively low reflectivity. Higher reflectivity leads to decoupling of the cavity leading first to unstable harmonic modelocking and eventually loss...
We study the Mode-Locking dynamics of 40-GHz semiconductor Fabry-Pérot lasers with intracavity saturable absorber by using a Traveling-Wave-Model and a time-domain response of the semiconductor material. We analyze the influence of key parameters and compare our predictions with experimental results.
We fabricated 40 GHz passively mode-locked AlGaInAs/InP 1.55 μm lasers integrated with surface-etched distributed Bragg mirrors. Numerically optimized gratings provide low loss and accurate wavelength control. The lasers produce 10-ps Gaussian-pulses with TBP of 0.75.
We have developed a comprehensive theoretical description of passive mode-locked semiconductor lasers based on a coarse-grained time-domain approach. The results are compared with the performance of a passively mode-locked AlGaInAs strained quantum well lasers.
We develop a comprehensive theoretical description of passive mode-locked semiconductor lasers based on a coarse grained time-domain approach. Under the approximation of intraband quasi equilibrium, our model accounts for the dispersion of gain, absorption and refractive index, nonlinear gain saturation from ultrafast processes, self-phase modulation, and spontaneous emission noise. We compare the...
Passive mode locking at 40 GHz is reported on AlGaInAs strained multi-quantum-well lasers. The devices show very stable mode locking operation over a very large range of biasing conditions and up to temperatures of 100degC.
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