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Photodetecctors using Si, Ge and other group IV alloys are of current interest for use at telecommunication wavelength 1550 nm. We have presented in this paper our work on resonant cavity enhanced (RCE) Si/SiGe multiple Quantum Well (MQW) and Ge Schottky photodetectors. Tensile strained Ge layers grown with suitable barriers show direct gap type I band alignment. Predicted performance of photodetectors...
Si-based photodetectors are currently studied for providing cheap solution to long haul and short distance communication and optical interconnects. Tensile strained Ge layers grown with suitable barriers show direct gap type I band alignment. We have worked on resonant cavity enhanced (RCE) photodetectors using Ge/SiGe type I structure. Performance of photodetectors using strong quntum confined Stark...
Active photonic devices like efficient light emitters and high speed modulators using Si and other group IV materials are difficult to realize due to indirect nature of band gap in silicon, germanium and their alloys. At present, efficient light emission has been observed by exploiting stimulated Raman scattering in silicon that needs optical pumping. An alternate route has been found recently that...
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