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Application of tensile strain in Ge lowers the G valley below the L valleys but the direct gap is reduced from the value in unstrained Ge. We considered Ge1-qCq (C <4%) active layers with Ge1-x-ySixSny as the barrier and estimated the range of compositions in the active and barrier layers to yield direct gap (~0.8 eV) type I alignment by using model solid theory. We have chosen a composition to...
Active photonic devices like efficient light emitters and high speed modulators using Si and other group IV materials are difficult to realize due to indirect nature of band gap in silicon, germanium and their alloys. At present, efficient light emission has been observed by exploiting stimulated Raman scattering in silicon that needs optical pumping. An alternate route has been found recently that...
In this paper, we have calculated the external quantum efficiency of Ge rich Si1-x-yGexCy on Si photodetectors at 1.3 mum assuming a large absorption coefficient of 2000 cm-1 and 5000 cm-1. For this purpose, the existing theory of band gap and band offset of ternary SiGeC alloy grown on Si as well as the reported absorption data for the Si0.11Ge0.88C0.01 alloy has been used. The work involves the...
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