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We have calculated the gain spectra of a heterojunction bipolar transistor laser in which a single InGaAs quantum well is embedded in the GaAs base. Effects of strain on band structure, finite barrier height on subband energies, momentum dependent matrix element, bimolecular and Auger recombination in recombination rate and a Lorentzian lineshape function are considered for gain calculation. The gain...
The band offsets and band gap for strained Si1-x-ySnxCy layers grown on Si substrate are estimated. The hydrostatic strain, the uniaxial strain and the intrinsic alloy effect are considered separately. The model is verified with the available bandgap energy of binary material.
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