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Defect structure of Czochralski grown silicon (Cz-Si) with nitrogen admixture, c_{N} ≤ 5 × 10^{14} cm^{-3} (Cz-Si:N), annealed for up to 10 h at 1270-1400 K under hydrostatic Ar pressure ≤ 1.1 GPa, was investigated by synchrotron diffraction topography (HASYLAB, Germany), X-ray reciprocal space mapping, and infrared spectroscopy. Extended defects were not detected in Cz-Si:N processed at up to 1270...
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