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Extreme ultraviolet (EUV) radiation with wavelengths of 11-14 nm is seen as the most promising candidate for a new lithographic technology. Compared with synchrotron radiation sources and laser-produced plasmas, gas discharge-produced plasma sources for EUV radiation are expected to offer lower cost of ownership. Using xenon, a broadband emission in the investigated wavelength range from 10 to 17...
Extreme ultraviolet (EUV) radiation with wavelengths of 11 to 14 nm is seen as the most promising candidate for a new lithographic technology. Compared to synchrotron radiation sources and laser produced plasmas, gas discharge produced plasma (GDPP) sources for EUV radiation are expected to offer lower cost of ownership. This paper describes the dependence of EUV emission on gas flow rate. Using xenon...
With the rapid development of the semiconductor chip, the lithography applied to the ICs is facing great challenges. Compared to the traditional optical lithography, extreme ultraviolet lithography (EUVL) is regarded as one of the most promising technique among the next generation lithography. Among all EUVL system, the EUV source is key issue. Compared with other light sources, the discharge produced...
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