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In this work, we present a detailed investigation of the electrical characteristics of 3D Gate-All-Around (GAA) Silicon nanowire (down to 6nm-diameter) SONOS memories compared to standard planar SONOS devices. In particular, by means of TCAD simulations, the write, erase and retention characteristics under uniform FN stress are explained and the main geometrical and electrostatic effects of 3D cylindrical...
We present excellent performance and reliability characteristics of a Silicon nanocrystal (Si-nc) 4 Mb NOR Flash array (90 nm technology node). Main original technological improvements are a cylindrical symmetry of the 1-Transistor bitcell, which significantly increases the coupling ratio (particularly critical in Si-nc memories), and the use of an optimized ONO control dielectric, which prevents...
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