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Three different nitride-based trapping layers have been investigated: a standard silicon nitride, a Silicon-rich and an Oxygen-rich silicon nitride deposited by Low Pressure Chemical Vapor Deposition (LPCVD). First the physical properties of the films are studied. A gap of 5.3 eV and a refractive index of 2.07 were found for the standard Silicon Nitride using spectroscopic ellipsometry. Excess silicon...
In this paper, we present a semi-analytical model tailored for nitride Charge-Trap TriGate (CT-3G) non-volatile memories under uniform stress: Fowler-Nordheim (FN) program (P) and erase (E) performances are reproduced. This model presents innovations in the tunnelling current calculation at corners through the Hankel function formalism. The validation of the model is operated through extensive comparisons...
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