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With regulations mandating industry toward Pb-free solders in all electronics, the development of interconnecting materials capable of withstanding harsh thermal conditions becomes one of the key technological elements for the development of next generation wide band-gap semiconductors. By reflowing Ni/Sn/Ni interconnects under temperature gradient, a new transient liquid phase (TLP) bonding process...
A comparative investigation of the reliability of 60Coγ ray irradiation on bulk-Si substrate and SOI substrate double polysilicon self-aligned (DPSA) NPN bipolar transistors is presented. Bulk silicon based DPSA NPN transistors show severe current gain degradation at low injection level, and a monotonic increase in current gain degradation with decreasing Emitter-Base (E-B) voltage is observed. SOI...
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