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A comparative investigation of the reliability of 60Coγ ray irradiation on bulk-Si substrate and SOI substrate double polysilicon self-aligned (DPSA) NPN bipolar transistors is presented. Bulk silicon based DPSA NPN transistors show severe current gain degradation at low injection level, and a monotonic increase in current gain degradation with decreasing Emitter-Base (E-B) voltage is observed. SOI...
Efficency, power quality and EMI are three crucial performance drivers in LVDC applications such as electrical supply, EV charging or DC aerospace. Recent developments in SiC MOSFETs and MMC for LVDC promise two significant improvements in LVDC inverter performance. However, the designer is left with many combinations of technology and inverter level to choose from. This paper aims to clarify this...
SiGe HBT is a key device for BiCMOS process used for high-speed communication, automotive radar and defense military. For normal SiGe process, the control of emitter window undercut is often not easy. In this paper, we studied the influence of emitter undercut on HBT parameters, through both TCAD simulation and wafer results. While transistors with larger area-to-perimeter ratio are supposed to have...
Diffuse X-ray scattering (DXS) at glancing incidence is a potentially powerful means for elucidating damage structures in irradiated solids. Fundamental to the analysis of diffuse X-ray scattering data is a knowledge of the atomic displacement field around defects, which for implantation damage in crystals like Si has been difficult to obtain using analytical solutions of elastic continuum theory...
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