The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Graphene has attracted great interest for application in spintronics due to its intrinsic low spin-orbital and hyperflne interaction. The graphene spin filter, which permits the transport of electrons with certain spin only, has been used to realize electron spin-based logic devices. The spin polarity of a spin filter has strong correlation with the parallel or anti-parallel magnetic alignment of...
A comparative analytical approach for performance evaluation of direct tunneling gate leakage current of ultrathin silicon MOS device has been introduced. Direct tunnel characteristics in NMOSFET with different gate dielectric material (fifth, SiCh and AI2O3) at nanoscale regime has been analyzed. The variations of direct tunneling current with gate length, gate width, oxide thickness and various...
Neural network computing philosophy is proposed to model the major features of human brain and to apply neurons functionality to build Computers capable of simulating features of the brain. Memristor is a new device that stores data as memory element and perform logic operations as a computational element with low surface area and power consumption features. These characteristics of memristors have...
Simple and accurate models for Gate leakage current (Ig) in nanoscale Metal Oxide Semiconductor Field Effect Transistor (MOSFET) are proposed in this paper. The accurate modeling for Oxide Electric field (Eox) and Oxide voltage (Vox) due to Short Channel Effect (SCE) between the gate and inverted channel is the key for higher accuracy. The Oxide Potential drop due to the charges image at the interface...
In this work, we propose an explicit analytical equation to show the variation of top gate threshold voltage with respect to the JFET bottom gate voltage for a Flexible Threshold Voltage Field Effect Transistor (Flexible-FET) by solving 2-D Poisson's equation with appropriate boundary conditions, incorporating Young's parabolic approximation. The proposed model illustrates excellent match with the...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.