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In this study, we report a direct comparison between two epitaxial silicon processes: 500degC using SiH4 and 350degC using Si3H8. Following four different metrics, we demonstrate that the reduction of silicon growth temperature results into the introduction of negatively charged defects possibly located at the Si/SiO2interface. However, the Epi Si growth at 350degC with Si3H8 remains beneficial compared...
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