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Variability of apple prices on Warsaw market at three levels of the market chain – the producer price of industrial apples and the producer and retail prices of the dessert apples were investigated. In order to assess their mutual connections a comparative vertical and horizontal analysis of changes on the above mentioned markets was performed. The direction and dynamics of price changes were analysed...
III-V FETs are being developed for potential application in 0.3-3 THz systems and VLSI. To increase bandwidth, we must increase the drive current Id = qnsvinjWg per unit gate width Wg, requiring both high sheet carrier concentrations ns and high injection velocities vinj. Present III-V NFETs restrict control region transport to the single isotropic Γ band minimum. As the gate dielectric is thinned,...
III-V FETs are in development for both THz and VLSI applications. In VLSI, high drive currents are sought at low gate drive voltages, while in THz circuits, high cutoff frequencies are required. In both cases, source and drain access resistivities must be decreased, and transconductance and drain current per unit gate width must be increased by reducing the gate dielectric thickness, reducing the...
Fretting-corrosion of electrical contacts is one of the main causes of failure of the electrical systems used in the automotive industry. The micro-motion involved in fretting is induced by vibrations of the vehicle as well as by thermal cycling. Tin is mainly used as a low-cost plating for the contact elements which are made of copper alloys. Use of gold coatings is restricted to vital functions...
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