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Using 3D simulations of statistical ensembles of unprecedented size, we have studied statistical threshold voltage variations induced by the combined effects of random dopants and line edge roughness in a state of the art 35 nm MOSFET. Statistical samples of 105 microscopically different transistors have been simulated. Based on careful statistical analysis of the simulation results we have developed...
The experimental data of a suspend gate field-effect transistor (SGFET) have been analyzed with three different models. A SGFET is a MOSFET with an elevated gate and an empty space below it. The exposed gate-oxide layer is bio functionalized with single stranded DNA, which is able to hybridize with a complementary strand. Due to the intrinsic charge of the phosphate groups (minus one elementary charge...
We present here a new unified analytic model for ballistic and quasi-ballistic transport. Starting from the classical approach of Natori, we enhanced it by taking into account degeneracy and adding consistently an original modelling of short channel effect (SCE) and drain induced barrier lowering (DIBL) by including quantum confinement. Our model has been validated by comparisons with TCAD simulations...
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