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Measurement and simulation of the stress state in the silicon die of a wafer-level fan out package can be difficult due to the complexity of high density packaging structures and the uncertainties in material properties at the nanoscale, yet these stresses directly affect the electrical behavior of the embedded active devices due to the piezoresistive effect in silicon. In this study, the residual...
The stress effect at the channel region of pFETs with compressive stress liner (c-SL) and eSiGe using replacement gate technology is firstly investigated in detail based on the combination of UV-Raman spectroscopy and 3D stress simulation. The gate length effect for the channel stress is confirmed by measurement and simulation. Moreover, the Ion dependence on the channel width is also investigated...
Simple ring-oscillator circuit has been used to estimate the degradation in circuit performance due to negative bias temperature instability (NBTI) effect but it fails to isolate the degradation from the NBTI for PMOS and the positive bias temperature instability (PBTI) for NMOS in high-K dielectric/metal gate CMOS technology. In this paper, we propose new circuit structures which monitor the NBTI...
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