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Accurate positioning of semiconductor nanowires with lasing emission at room temperature at targeted locations, onto multiple substrates and forming complex spatial patterns is demonstrated using a novel nanoscale Transfer Printing technique.
The growth of III-V semiconductor core-shell nanowires by Au-catalyzed metal organic chemical vapor deposition is described. The effect of growth conditions on the properties of the nanowires is discussed. Results nanowire solar cells and lasers are also presented.
InGaAs quantum dots (QDs) and nanowires have been grown on GaAs by metal-organic chemical vapour deposition on GaAs (100) and (111)B substrates, respectively. InGaAs QD lasers were fabricated and characterised. Results show ground-state lasing at about 1150 nm in devices with lengths greater than 2.5 mm. We also observed a strong influence of nanowire density on nanowire height specific to nanowires...
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