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The channel process to further improve the performance of bottom gate hafnium-doped zinc oxide (HZO) thin-film transistors (TFTs) is optimised. The effects of channel thickness on the electrical performances of HZO TFTs is studied. The results show that the extracted saturation mobility increases first and then decreases with the increase of HZO film thickness, reaching maximum when the channel thickness...
The design of a high-speed output buffer amplifier for driving the large column line loads of large-size TFT-LCDs is presented. The major circuit of the output buffer is a rail-to-rail current mirror amplifier which can control the class-AB output stage and auxiliary output stage at the same time. The proposed dynamic bias method not only increases the driving capability of the class-AB output stage...
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