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InAs/InGaAs quantum dot mode-locked lasers are fabricated and characterized. The modal gain as the saturable absorber voltage (SAV) changes is investigated. The ground state lasing dominates at low SAV, and excited state transition emerges when SAV increases.
We present the first monolithically integrated semiconductor pulse source consisting of a mode-locked laser diode, Mach-Zehnder pulse picker, and semiconductor optical amplifier. Pairs of 5.6 ps pulses are generated at a 250 MHz repetition rate.
Wave breaking of similariton in all-normal-dispersion (ANDi) fiber lasers is studied theoretically and experimentally. The nonlinear intra-cavity spectral filtering balance becomes unstable with greatly-decreased ASE noise tolerance under excessive nonlinearity, and then wave breaking occurs.
The properties of third-order dispersion (TOD) compensation of a double pumped ring fiber laser was simulated. Results of numerical simulation demonstrate that device performances are better than the laser with traditional structure.
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