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Mechanical positioning is used to control the wavelength of light emission from semiconductor heterostructures. In our work, a SixN/InP cantilever containing an InGaAs surface well collapses over another InGaAs quantum well. The spacing between the wells varies along the collapsed cantilever, changing the coupling between heterostructures and thus the electron states. In an essence, we are altering...
This work investigates the effect of the quantum well interface on the photoluminescence (PL) spectrum. The samples consist of an MBE (molecular beam epitaxy) grown InP/InGaAs heterostructure with two sets of a multiquantum well structure (MQW) and a single quantum well (SQW) symmetrically placed around a sacrificial layer. All are attached to a common anchor where the heterostructure is still in...
We use the finite difference time domain method (FDTD) to investigate polarisation control of single-photon emission from single quantum dots confined in elliptical micro-pillar microcavities. In contrast to circular pillars, one of the cavity modes has smaller modal volume and maintains high Q-factor.
Nanometer sized pores were formed for the first time on p-type InP surfaces by electrochemical anodic polarization in HF and HBr solutions in the dark. The surface structures were characterized with scanning electron microscopy (SEM), Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), and photo-luminescence (PL) measurements. It is found that the surface morphology strongly...
Long-lived spin coherence up to 80 K is deduced from quantum beats measured on InAs dots using a highly sensitive pump-probe technique. The beat pattern can in addition be manipulated by thermal annealing of dots
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